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arXiv · 1903.09389

Role of remote interfacial phonons in the resistivity of graphene

Y. G. You·J. H. Ahn·B. H. Park·Y. Kwon·E. E. B. Campbell·S. H. Jhang
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Abstract

The temperature ($\it T$) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates; HfO$_2$, SiO$_2$ and h-BN. The resistivity of graphene shows a linear $\it T$-dependence at low $\it T$ and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.

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Y. G. You, J. H. Ahn, B. H. Park, Y. Kwon, E. E. B. Campbell, S. H. Jhang. 2019-03-22. Role of remote interfacial phonons in the resistivity of graphene. https://doi.org/10.1063/1.5097043

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