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arXiv · 1903.11645

High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO$_3$/SrZrO$_3$ heterostructures

Arnaud P. Nono Tchiomo·Wolfgang Braun·Bryan P. Doyle·Wilfried Sigle·Peter van Aken·Jochen Mannhart·Prosper Ngabonziza
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Abstract

By inserting a SrZrO$_3$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO$_3$ films. A room temperature mobility of 140 cm$^2$ V$^{-1}\text{s}^{-1}$ is achieved for 25-nm-thick films without any post-growth treatment. The density of threading dislocations is only $4.9\times 10^{9}$ cm$^{-2}$ for buffered films prepared on (110) TbScO$_3$ substrates by pulsed laser deposition.

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Arnaud P. Nono Tchiomo, Wolfgang Braun, Bryan P. Doyle, Wilfried Sigle, Peter van Aken, Jochen Mannhart, Prosper Ngabonziza. 2019-03-27. High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO$_3$/SrZrO$_3$ heterostructures. https://doi.org/10.1063/1.5094867

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