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arXiv · 1904.03151

Quantum Hall stripes in high-density GaAs/AlGaAs quantum wells

X. Fu·Q. Shi·M. A. Zudov·Y. J. Chung·K. W. Baldwin·L. N. Pfeiffer·K. W. West
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Abstract

We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density ($n_e > 4 \times 10^{11}$ cm$^{-2}$) which is expected to favor QHS orientation along unconventional $\left < 1\bar{1}0 \right >$ crystal axis and along the in-plane magnetic field $B_{||}$. Surprisingly, we find that at $B_{||} = 0$ QHSs in our samples are aligned along $\left < 110 \right >$ direction and can be reoriented only perpendicular to $B_{||}$. These findings suggest that high density alone is not a decisive factor for either abnormal native QHS orientation or alignment with respect to $B_{||}$, while quantum confinement of the 2DEG likely plays an important role.

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X. Fu, Q. Shi, M. A. Zudov, Y. J. Chung, K. W. Baldwin, L. N. Pfeiffer, K. W. West. 2019-04-05. Quantum Hall stripes in high-density GaAs/AlGaAs quantum wells. https://doi.org/10.1103/physrevb.98.205418

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