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arXiv · 1904.05792

Large-signal model of the Metal-Insulator-Graphene diode targeting RF applications

Francisco Pasadas·Mohamed Saeed·Ahmed Hamed·Zhenxing Wang·Renato Negra·Daniel Neumaier·David Jiménez
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Abstract

We present a circuit-design compatible large-signal compact model of metal-insulator-graphene (MIG) diodes for describing its dynamic response for the first time. The model essentially consists of a voltage-dependent diode intrinsic capacitance coupled with a static voltage-dependent current source, the latter accounts for the vertical electron transport from/towards graphene, which has been modeled by means of the Dirac-thermionic electron transport theory through the insulator barrier. Importantly, the image force effect has been found to play a key role in determining the barrier height, so it has been incorporated into the model accordingly. The resulting model has been implemented in Verilog A to be used in existing circuit simulators and benchmarked against an experimental 6-nm TiO2 barrier MIG diode working as a power detector.

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Francisco Pasadas, Mohamed Saeed, Ahmed Hamed, Zhenxing Wang, Renato Negra, Daniel Neumaier, David Jiménez. 2019-04-11. Large-signal model of the Metal-Insulator-Graphene diode targeting RF applications. https://doi.org/10.1109/led.2019.2911116

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