SearcharxivSearch

arXiv · 1904.09181

Theoretical study of phase transitions in Sb2S3, Bi2S3 and Sb2Se3 under compression

Abstract

We report a theoretical study of Sb2S3, Sb2Se3 and Bi2S3 sesquichalcogenides at hydrostatic pressures up to 60 GPa. We explore the possibility that the R-3m, C2/m, C2/c and Im-3m phases observed in sesquichalcogenides with heavier cations, viz. Bi2Se3, Bi2Te3 and Sb2Te3, could also be formed in the former compounds as suggested by recent experiments. Our calculations show that the C2/m and C2/c phases are energetically unstable in any of the three compounds and over the entire range of pressures examined. In contrast, the disordered bcc-like Im-3m phase is energetically stable at high pressures, but only the Sb2Se3 phase does not show dynamical instabilities below 60 GPa. Our calculations show that the Pnma structure is the most energetically stable Sb2S3 and Bi2S3 phase at ambient pressure whereas, surprisingly, the R-3m phase of Sb2Se3 is predicted to have the lowest enthalpy energy at 0 GPa, in contradiction to experimental evidence. Our calculations show that both Pnma and R-3m phases are dynamical and mechanically stable at room pressure. These results suggest that the formation of the R-3m phase in Sb2Se3 could be feasible at close to ambient conditions. To aid its identification, we provide a theoretical crystal structure (lattice and atomic parameters) and complete infrared and Raman spectra for this phase.

Explore related subjects

Keep this discovery

BibTeXRIS

E. Lora da Silva, J. M. Skelton, P. Rodríguez-Hernández, A. Muñoz, D. Martínez-García, F. J. Manjón. 2019-04-19. Theoretical study of phase transitions in Sb2S3, Bi2S3 and Sb2Se3 under compression. https://arxiv.org/abs/1904.09181

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci