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arXiv · 1904.10218

Large-area synthesis of continuous two-dimensional MoTexSe2-x alloy films by chemical vapor deposition

Shudong Zhao·Meilin Lu·Shasha Xue·Lei Tao·Yu Sui·Yang Wang
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Abstract

Great achievements have been made in alloying of two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), which can allow tunable band gaps for practical applications in optoelectronic devices. However, telluride-based TMDs alloys were less studied due to the difficulties of sample synthesis. Here, in this work we report the large-area synthesis of 2D MoTexSe2-x alloy films with controllable Te composition by a modified alkali metal halides assisted chemical vapor deposition method. The as-prepared films have millimeter-scale transverse size. Raman spectra experiments combining calculated Raman spectra and vibrational images obtained by density functional theory (DFT) confirmed the 2H-phase of the MoTexSe2-x alloys. The A1g mode of MoSe2 shows a significant downshift accompanied by asymmetric broadening to lower wavenumber with increasing value of x, while E12g mode seems unchanged, which were well explained by a phonon confinement model. Our work provides a simple method to synthesize large-scale 2H phase Te-based 2D TMDs alloys for their further applications.

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Shudong Zhao, Meilin Lu, Shasha Xue, Lei Tao, Yu Sui, Yang Wang. 2019-04-23. Large-area synthesis of continuous two-dimensional MoTexSe2-x alloy films by chemical vapor deposition. https://doi.org/10.1063/1.5102085

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