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arXiv · 1905.01328

Terahertz Raman spectroscopy probe of intermolecular vibration in high-mobility organic semiconductors under uniaxial strain

Junto Tsurumi·Takayoshi Kubo·Hiroyuki Ishii·Masato Mitani·Toshihiro Okamoto·Shun Watanabe·Jun Takeya
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Abstract

Terahertz Raman spectroscopy was performed on high-mobility organic single-crystal semiconductors, by which the phonon energy at the Gamma point was qualified as a function of external uniaxial strain. The observation of peak shifts in Raman modes under uniaxial strain revealed that application of an external strain can effectively tune the intermolecular vibration that particularly correlates electron-phonon coupling. Terahertz Raman spectroscopy conducted in conjunction with molecular dynamics simulation provides an in-depth understanding of the recently discovered very large strain effect on charge conduction in high-mobility organic semiconductors.

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Junto Tsurumi, Takayoshi Kubo, Hiroyuki Ishii, Masato Mitani, Toshihiro Okamoto, Shun Watanabe, Jun Takeya. 2019-05-03. Terahertz Raman spectroscopy probe of intermolecular vibration in high-mobility organic semiconductors under uniaxial strain. https://arxiv.org/abs/1905.01328

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