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arXiv · 1905.04879

Electrical and ELectronic Properties of Strained Mono-layer InTe

Shoeib Babaee Touski·Mohammad Ariapour·Manouchehr Hosseini
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Abstract

In this paper, electrical and electronic properties of strained mono-layer InTe for two structures, $\alpha$, and $\beta$ phases, is investigated. The band structure is obtained using density functional theory (DFT). The minimum energy and effective mass of the conduction band and second conduction band for different strains are calculated. A FET with using InTe as the channel material is investigated. Voltage-current characteristics of InTe FET is calculated and I$_{ON}$/I$_{OFF}$ ratio is obtained with respect to biaxial strain.

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Shoeib Babaee Touski, Mohammad Ariapour, Manouchehr Hosseini. 2019-05-13. Electrical and ELectronic Properties of Strained Mono-layer InTe. https://arxiv.org/abs/1905.04879

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