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arXiv · 1906.07352

Deep levels analysis in wavelength extended InGaAsBi photodetector

Jian Huang·Baile Chen·Zhuo Deng·Yi Gu·Yingjie Ma·Jian Zhang·Xiren Chen·Jun Shao
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Abstract

InP based dilute Bismide InGaAsBi material is emerging as a promising candidate for extending short wavelength infrared detection. One critical factor to limit the performance of these InGaAsBi photodiodes is dark current caused by defects within the material. In this work, low frequency noise spectroscopy (LFNS) and temperature varied photoluminescence was used to characterize the defect levels in the devices. Three deep levels located at Ec -0.33 eV, Ev +0.14 eV, and Ec -0.51 eV were identified from the LFNS spectra, which are consistent with emission peak energy found by photoluminescence spectra of InGaAsBi.

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Jian Huang, Baile Chen, Zhuo Deng, Yi Gu, Yingjie Ma, Jian Zhang, Xiren Chen, Jun Shao. 2019-06-18. Deep levels analysis in wavelength extended InGaAsBi photodetector. https://doi.org/10.1088/1361-6641/ab3539

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