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arXiv · 1906.07464

Muon probes of temperature-dependent charge carrier kinetics in semiconductors

K. Yokoyama·J. S. Lord·P. W. Mengyan·M. R. Goeks·R. L. Lichti
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Abstract

We have applied the photoexcited muon spin spectroscopy technique (photo-$\mu$SR) to intrinsic germanium with the goal of developing a new method for characterizing excess carrier kinetics in a wide range of semiconductors. Muon spin relaxation rates can be a unique measure of excess carrier density and utilized to investigate carrier dynamics. The obtained carrier lifetime spectrum can be modeled with a simple diffusion equation to determine bulk recombination lifetime and carrier mobility. Temperature dependent studies of these parameters can reveal the recombination and diffusion mechanism.

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K. Yokoyama, J. S. Lord, P. W. Mengyan, M. R. Goeks, R. L. Lichti. 2019-06-18. Muon probes of temperature-dependent charge carrier kinetics in semiconductors. https://doi.org/10.1063/1.5115596

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