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arXiv · 1906.10526

Silicon-vacancy color centers in Si- and Si,P-doped nanodiamonds: thermal susceptibilities of photo luminescence band at 740 nm

Sumin Choi·Viatcheslav N. Agafonov·Valery A. Davydov·L. F. Kulikova·Taras Plakhotnik
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Abstract

We have characterized thermal susceptibilities of the spectral band at 740 nm of silicon-vacancy (SiV) centers in Si- and Si,P-doped nanodiamonds over a temperature range from 295 K to 350 K, which is of interest for thermometry in biological systems. Si-doped crystals reveal linear dependence of the SiV zero-phonon line position, width and relative amplitude with susceptibilities of 0.0126(4) nm/K, 0.062(2) nm/K and $-0.037(2)$ K$^{-1}$, respectively. Si,P-doped nanodiamonds show significantly smaller (up to 35 % for the width) susceptibilities and prove control of SiV properties with additional chemical doping. It is argued that a significant contribution to the heating of the nanodiamonds induced by laser light can be intrinsic due to a high concentration and low luminescence quantum yield of SiV centers.

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Sumin Choi, Viatcheslav N. Agafonov, Valery A. Davydov, L. F. Kulikova, Taras Plakhotnik. 2019-06-24. Silicon-vacancy color centers in Si- and Si,P-doped nanodiamonds: thermal susceptibilities of photo luminescence band at 740 nm. https://arxiv.org/abs/1906.10526

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