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arXiv · 1906.11688

Magnetic proximity effect induced FMR frequency enhancement in {Py/FeMn} bilayers

Dmytro M. Polishchuk·Taras I. Polek·Vladyslav Yu. Borynskyi·Anatolii F. Kravets·Alexandr I. Tovstolytkin·Vladislav Korenivski
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Abstract

Ferromagnetic resonance (FMR) in exchange-coupled ferromagnet-antiferromagnet (FM/AFM) bilayers commonly shows a moderate increase in the resonance frequency owing to the induced unidirectional anisotropy. Here we report a large FMR frequency enhancement toward the sub-THz range observed in Py/FeMn with ultrathin AFM FeMn. The effect is connected with a sizable induced magnetic moment in FeMn caused by the magnetic proximity effect from the Py layer. The observed FMR properties are explained as due to the competing intrinsic antiferromagnetic order and the ferromagnetic proximity effect in nanometer thin FeMn. Our results show that combining materials with strong and weak anti/ferromagnetic ordering can potentially close the notoriously difficult GHz-THz gap important for high-speed spintronic applications.

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Dmytro M. Polishchuk, Taras I. Polek, Vladyslav Yu. Borynskyi, Anatolii F. Kravets, Alexandr I. Tovstolytkin, Vladislav Korenivski. 2019-06-27. Magnetic proximity effect induced FMR frequency enhancement in {Py/FeMn} bilayers. https://arxiv.org/abs/1906.11688

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