Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors

Igor Bejenari

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arXiv · 1907.10495

Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors

Igor Bejenari

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Abstract

A simple model based on the WKB approximation for one-dimensional ballistic multi--gate reconfigurable field--effect transistors (RFETs) with Schottky-Barrier contacts has been developed for the drain current taking into account electron and hole band-to-band tunneling. By using a proper approximation of both the Fermi-Dirac distribution function and transmission probability, an analytical solution for the Landauer integral can be obtained. A comparative analysis of the two-gate and triple-gate RFETs is performed based on the numerical integration of the current integral.

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Igor Bejenari. 2019-07-22. Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors. https://arxiv.org/abs/1907.10495

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