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arXiv · 1907.11131

A Lateral MOS-Capacitor Enabled ITO Mach-Zehnder Modulator for Beam Steering

Rubab Amin·Rishi Maiti·Jonathan K. George·Xiaoxuan Ma·Zhizhen Ma·Hamed Dalir·Mario Miscuglio·Volker J. Sorger
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Abstract

Here, we experimentally demonstrate an Indium Tin Oxide (ITO) Mach-Zehnder interferometer heterogeneously integrated in silicon photonics. The phase shifter section is realized in a novel lateral MOS configuration, which, due to favorable electrostatic overlap, leads to efficient modulation (V{\pi}L = 63 Vum). This is achieved by (i) selecting a strong index changing material (ITO) and (ii) improving the field overlap as verified by the electrostatic field lines. Furthermore, we show that this platform serves as a building block in an endfire silicon photonics optical phased array (OPA) with a half-wavelength pitch within the waveguides with anticipated performance, including narrow main beam lobe (<3{\deg}) and >10 dB suppression of the side lobes, while electrostatically steering the emission profile up to plus/minus 80{\deg}, and if further engineered, can lead not only towards nanosecond-fast beam steering capabilities in LiDAR systems but also in holographic display, free-space optical communications, and optical switches.

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Rubab Amin, Rishi Maiti, Jonathan K. George, Xiaoxuan Ma, Zhizhen Ma, Hamed Dalir, Mario Miscuglio, Volker J. Sorger. 2019-06-02. A Lateral MOS-Capacitor Enabled ITO Mach-Zehnder Modulator for Beam Steering. https://doi.org/10.1109/jlt.2019.2956719

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