Field-Effect Transistor based on Surface Negative Refraction in Weyl Nanowires

Guangze Chen; Wei Chen; Oded Zilberberg

doi:10.1063/1.5126033

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arXiv · 1908.11102

Field-Effect Transistor based on Surface Negative Refraction in Weyl Nanowires

Guangze Chen·Wei Chen·Oded Zilberberg

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Abstract

Weyl semimetals are characterized by their bulk Weyl points -- conical band touching points that carry a topological monopole charge -- and Fermi arc states that span between the Weyl points on the surface of the material. Recently, significant progress has been made towards understanding and measuring the physical properties of Weyl semimetals. Yet, potential applications remain relatively sparse. Here, we propose Weyl semimetal nanowires as field-effect transistors, dubbed WEYLFETs. Specifically, applying gradient gate voltage along the nanowire, an electrical field is generated that effectively tilts the open surfaces, thus, varying the relative orientation between Fermi arcs on different surfaces. As a result, perfect negative refraction between adjacent surfaces can occur and longitudinal conductance along the wire is suppressed. The WEYLFET offers a high on/off ratio with low power consumption. Adverse effects due to dispersive Fermi arcs and surface disorder are studied.

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Guangze Chen, Wei Chen, Oded Zilberberg. 2019-08-29. Field-Effect Transistor based on Surface Negative Refraction in Weyl Nanowires. https://doi.org/10.1063/1.5126033

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