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arXiv · 1909.00245

Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate

Yumei Jing·Shaoyun Huang·Jinxiong Wu·Mengmeng Meng·Xiaobo Li·Yu Zhou·Hailin Peng·H. Q. Xu
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Abstract

Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and quantum information processing. The absence of energy gap on the TI surface limits the experimental realization of a quantum confined system in three-dimensional topological insulators. This communication reports on the successful realization of single-electron transistor devices in Bi$_2$Te$_3$ nanoplates by state of the art nanofabrication techniques. Each device consists of a confined central island, two narrow constrictions that connect the central island to the source and drain, and surrounding gates. Low-temperature transport measurements demonstrate that the two narrow constrictions function as tunneling junctions and the device shows well-defined Coulomb current oscillations and Coulomb diamond shaped charge stability diagrams. This work provides a controllable and reproducible way to form quantum confined systems in three-dimensional topological insulators, which should greatly stimulate research towards confined topological states, low energy-dissipative devices and quantum information processing.

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Yumei Jing, Shaoyun Huang, Jinxiong Wu, Mengmeng Meng, Xiaobo Li, Yu Zhou, Hailin Peng, H. Q. Xu. 2019-08-31. Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate. https://doi.org/10.1002/adma.201903686

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