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arXiv · 1909.08480

InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A

V. S. Kunnathully·T. Riedl·A. Trapp·T. Langer·D. Reuter·J. K. N. Lindner
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Abstract

Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this possibility in the InAs/GaAs(111)A system using a combination of nanosphere lithography and reactive ion etching of the GaAs(111)A substrate for nano-patterning of the substrate, yielding pillars with honeycomb and hexagonal arrangements and varied nearest neighbor distances. Substrate patterning is followed by MBE growth of InAs at temperatures of 150 - 350 C and growth rates of 0.011 nm/s and 0.11 nm/s. InAs growth in the form of nano-islands on the pillar tops is achieved by lowering the adatom migration length by choosing a low growth temperature of 150 C at the growth rate 0.011 nm/s. The choice of a higher growth rate of 0.11 nm/s results in higher InAs island nucleation and the formation of hillocks concentrated at the pillar bases due to a further reduction of adatom migration length. A common feature of the growth morphology for all other explored conditions is the formation of merged hillocks or pyramids with well-defined facets due to the presence of a concave surface curvature at the pillar bases acting as adatom sinks.

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V. S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J. K. N. Lindner. 2019-09-18. InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A. https://doi.org/10.1016/j.jcrysgro.2020.125597

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