A Novel Low Power Non-Volatile SRAM Cell with Self Write Termination

Kanika Monga; Akul Malhotra; Nitin Chaturvedi; S. Gurunayaranan

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arXiv · 1910.04683

A Novel Low Power Non-Volatile SRAM Cell with Self Write Termination

Kanika Monga·Akul Malhotra·Nitin Chaturvedi·S. Gurunayaranan

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Abstract

A non-volatile SRAM cell is proposed for low power applications using Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) devices. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be switched off during standby operation. To further increase the power savings, a write termination circuit is designed which detects completion of MTJ write and closes the bidirectional current path for the MTJ. A reduction of 25.81% in the number of transistors and a reduction of 2.95% in the power consumption is achieved in comparison to prior work on write termination circuits.

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Kanika Monga, Akul Malhotra, Nitin Chaturvedi, S. Gurunayaranan. 2019-10-01. A Novel Low Power Non-Volatile SRAM Cell with Self Write Termination. https://arxiv.org/abs/1910.04683

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