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arXiv · 1910.07821

Volume Fabrication of Quantum Cascade Lasers on 200 mm-CMOS pilot line

JG Coutard·M Brun·M Fournier·O Lartigue·F Fedeli·G Maisons·JM Fedeli·S Nicoletti·M Carras·L Duraffourg
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Abstract

The manufacturing cost of quantum cascade lasers is still a major bottleneck for the adoption of this technology for chemical sensing. The integration of Mid-Infrared sources on Si substrate based on CMOS technology paves the way for high-volume low-cost fabrication. Furthermore, the use of Si-based fabrication platform opens the way to the co-integration of QCL Mid-InfraRed sources with SiGe-based waveguides, allowing realization of optical sensors fully integrated on planar substrate. We report here the fabrication and the characterization of DFB-QCL sources using top metal grating approach working at 7.4 microns fully implemented on our 200 mm CMOS pilot line. These QCL featured threshold current density of 2.5 kA/cm2 and a linewidth of 0.16 cm-1 with a high fabrication yield. This approach paves the way toward a Mid-IR spectrometer at the silicon chip level.

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JG Coutard, M Brun, M Fournier, O Lartigue, F Fedeli, G Maisons, JM Fedeli, S Nicoletti, M Carras, L Duraffourg. 2019-10-21. Volume Fabrication of Quantum Cascade Lasers on 200 mm-CMOS pilot line. https://arxiv.org/abs/1910.07821

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