Charge transport layer dependent electronic band bending in perovskite solar cells and its correlation to device degradation

Abstract

Perovskite solar cells (PSCs) have shown remarkably improved power-conversion efficiency of around 25%. However, their working principle remains arguable and the stability issue has not been solved yet. In this report, we revealed that the working mechanism of PSCs is explained by a dominant pn junction occurring at the different interface depending on electron transport layer, and charges are accumulated at the corresponding dominant junction initiating device degradation. Locations of a dominant pn junction, the electric field, and carrier-density distribution with respect to electron-transport layers in the PCS devices were investigated by using the electron-beam-induced current measurement and Kelvin probe force microscopy. The amount of accumulated charges in the devices was analyzed using the charge-extraction method and the degradation process of devices was confirmed by SEM measurements. From these observations, we identified that the dominant pn junction appears at the interface where the degree of band bending is higher compared to the other interface, and charges are accumulated at the corresponding junction where the device degradation is initiated, which suggests that there exists a strong correlation between PSC working principle and device degradation. We highlight that an ideal pin PSC that can minimize the degree of band bending should be designed for ensuring long-term stability, via using proper selective contacts