Error Correction for Partially Stuck Memory Cells

Haider Al Kim; Sven Puchinger; Antonia Wachter-Zeh

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arXiv · 1911.02904

Error Correction for Partially Stuck Memory Cells

Haider Al Kim·Sven Puchinger·Antonia Wachter-Zeh

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Abstract

We present code constructions for masking $u$ partially stuck memory cells with $q$ levels and correcting additional random errors. The results are achieved by combining the methods for masking and error correction for stuck cells in [1] with the masking-only results for partially stuck cells in [2]. We present two constructions for masking $u 1$ and $q>2$, all new constructions require less redundancy for masking partially stuck cells than previous work on stuck cells, which in turn can result in higher code rates at the same masking and error correction capability.

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Haider Al Kim, Sven Puchinger, Antonia Wachter-Zeh. 2019-11-07. Error Correction for Partially Stuck Memory Cells. https://arxiv.org/abs/1911.02904

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