Searcharxiv⌕ Search
Home/Archive/arXiv

arXiv · 1911.08120

Quantum phases of a one-dimensional Majorana-Bose-Hubbard model

Ananda Roy·Johannes Hauschild·Frank Pollmann
View original source ↗Read source document ↗Export metadata ↓

Abstract

Majorana zero modes (MZM-s) occurring at the edges of a 1D, p-wave, spinless superconductor, in absence of fluctuations of the phase of the superconducting order parameter, are quintessential examples of topologically-protected zero-energy modes occurring at the edges of 1D symmetry-protected topological phases. In this work, we numerically investigate the fate of the topological phase in the presence of phase-fluctuations using the density matrix renormalization group (DMRG) technique. To that end, we consider a one-dimensional array of MZM-s on mesoscopic superconducting islands at zero temperature. Cooper-pair and MZM-assisted single-electron tunneling, together with finite charging energy of the mesoscopic islands, give rise to a rich phase-diagram of this model. We show that the system can be in either a Mott-insulating phase, a Luttinger liquid (LL) phase of Cooper-pairs or a second gapless phase. In contrast to the LL of Cooper-pairs, this second phase is characterized by nonlocal string correlation functions which decay algebraically due to gapless charge-$e$ excitations. The three phases are separated from each other by phase-transitions of either Kosterlitz-Thouless or Ising type. Using a Jordan-Wigner transformation, we map the system to a generalized Bose-Hubbard model with two types of hopping and use DMRG to analyze the different phases and the phase-transitions.

Explore related subjects

cond-mat.mes-hallcond-mat.stat-mechcond-mat.str-elquant-ph

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Ananda Roy, Johannes Hauschild, Frank Pollmann. 2020-02-20. Quantum phases of a one-dimensional Majorana-Bose-Hubbard model. https://doi.org/10.1103/physrevb.101.075419

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Emergence of spin-orbit coupling among spin, atomic orbital, and Bloch dynamics in Janus double-transition-metal MXenes

We found a spin-orbit coupling to cause a simultaneous correlation among three degrees of freedom, the electronic spin, orbital, and Bloch dynamics in an investigation into the electronic structure of Janus double-transition-metal MXenes, Mo$_2$HfC$_2$OS and W$_2$HfC$_2$OS. In this paper, it is also revealed that the spin-orbit coupling causes a staggered spin configuration with a trigonal pattern around the $\Gamma$ point near the insulating gap. We developed a reduced Hamiltonian describing the electronic states and show that the spin-orbit coupling cannot be equated with conventional forms for a single electron in solids, LS, Rashba, and Dresselhaus couplings, even in the approximation under the low-energy and small wave number condition. Because of the intrinsic shape of the conduction band, a trigonally alternating spin-momentum locking emerges with the spin axis perpendicular to the layer plane. The theoretical analysis shows that these Janus materials can provide a platform for exploring the spin-related phenomena due to the trigonal spin-momentum locking other than Rashba and Dresselhaus types.

cond-mat.mes-hall↗
arXiv2026

A substrate booster for P-type 2D ferromagnetic semiconductor

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

cond-mat.mes-hall↗
arXiv2026

In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

cond-mat.mes-hall↗