Quantum interference effect on exciton transport in monolayer semiconductors

M. M. Glazov

doi:10.1103/physrevlett.124.166802

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arXiv · 1911.10528

Quantum interference effect on exciton transport in monolayer semiconductors

M. M. Glazov

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Abstract

We study theoretically weak localization of excitons in atomically-thin transition metal dichalcogenides. The constructive interference of excitonic de Broglie waves on the trajectories forming closed loops results in a decrease of the exciton diffusion coefficient. We calculate the interference contribution to the diffusion coefficient for the experimentally relevant situation of exciton scattering by acoustic phonons and static disorder. For the acoustic phonon scattering, the quantum interference becomes more and more important with increasing the temperature. Our estimates show that the quantum contribution to the diffusion coefficient is considerable for the state-of-the-art monolayer and bilayer transition metal dichalcogenides.

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M. M. Glazov. 2020-04-01. Quantum interference effect on exciton transport in monolayer semiconductors. https://doi.org/10.1103/physrevlett.124.166802

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