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arXiv · 1912.06722

Electric field induced metallic behavior in thin crystals of ferroelectric {\alpha}-In2Se3

Justin R. Rodriguez·William Murray·Kazunori Fujisawa·Seng Huat Lee·Alexandra L. Kotrick·Yixuan Chen·Nathan Mckee·Sora Lee·Mauricio Terrones·Susan Trolier-McKinstry·Thomas N. Jackson·Zhiqiang Mao·Zhiwen Liu·Ying Liu
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Abstract

Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of {\alpha}-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs) were prepared and measured from room to the liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of the electrical polarization and an electric field induced metallic state in {\alpha}-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of the integration of data storage and logic operations in the same device.

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Justin R. Rodriguez, William Murray, Kazunori Fujisawa, Seng Huat Lee, Alexandra L. Kotrick, Yixuan Chen, Nathan Mckee, Sora Lee, Mauricio Terrones, Susan Trolier-McKinstry, Thomas N. Jackson, Zhiqiang Mao, Zhiwen Liu, Ying Liu. 2019-12-13. Electric field induced metallic behavior in thin crystals of ferroelectric {\alpha}-In2Se3. https://doi.org/10.1063/5.0014945

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