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arXiv · 1912.09352

Silicon-vacancy color centers in phosphorus-doped diamond

Assegid Mengistu Flatae·Stefano Lagomarsino·Florian Sledz·Navid Soltani·Shannon S. Nicley·Ken Haenen·Robert Rechenberg·Michael F. Becker·Silvio Sciortino·Nicla Gelli·Lorenzo Giuntini·Francesco Taccetti·Mario Agio
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Abstract

The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this study, we create SiV color centers in diamond samples with different phosphorus concentrations and show that the fluorescence background due to doping, nitrogen-impurities and ion implantation induced defects can be significantly suppressed. Single-photon emitters in phosphorus-doped diamond are obtained at the low Si-ion implantation fluences.

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Assegid Mengistu Flatae, Stefano Lagomarsino, Florian Sledz, Navid Soltani, Shannon S. Nicley, Ken Haenen, Robert Rechenberg, Michael F. Becker, Silvio Sciortino, Nicla Gelli, Lorenzo Giuntini, Francesco Taccetti, Mario Agio. 2019-12-19. Silicon-vacancy color centers in phosphorus-doped diamond. https://doi.org/10.1016/j.diamond.2020.107797

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