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arXiv · 1912.11010

Hydride Vapor-Phase Epitaxy Reactor for Bulk GaN Growth

Vladislav Voronenkov·Natalia Bochkareva·Andrey Zubrilov·Yuri Lelikov·Ruslan Gorbunov·Philipp Latyshev·Yuri Shreter
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Abstract

An HVPE reactor for the growth of bulk GaN crystals with a diameter of 50 mm was developed. Growth rate non-uniformity of 1% was achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically-resistant refractory materials were used instead of quartz in the reactor hot zone. High-capacity external gallium precursor sources were developed for the non-stop growth of the bulk GaN layers. A load-lock vacuum chamber and a dry in-situ growth chamber cleaning were implemented to improve the growth process reproducibility. Freestanding GaN crystals with a diameter of 50 mm were grown with the reactor.

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Vladislav Voronenkov, Natalia Bochkareva, Andrey Zubrilov, Yuri Lelikov, Ruslan Gorbunov, Philipp Latyshev, Yuri Shreter. 2019-12-23. Hydride Vapor-Phase Epitaxy Reactor for Bulk GaN Growth. https://doi.org/10.1002/pssa.201900629

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