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arXiv · 2001.01735

Coulomb Engineering of two-dimensional Mott materials

Erik G. C. P. van Loon·Malte Schüler·Daniel Springer·Giorgio Sangiovanni·Jan M. Tomczak·Tim O. Wehling
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Abstract

Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.

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Erik G. C. P. van Loon, Malte Schüler, Daniel Springer, Giorgio Sangiovanni, Jan M. Tomczak, Tim O. Wehling. 2020-01-06. Coulomb Engineering of two-dimensional Mott materials. https://doi.org/10.1038/s41699-023-00408-x

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