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arXiv · 2001.07329

Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 $\mu$m

N. Ha·T. Mano·S. Dubos·T. Kuroda·Y. Sakuma·K. Sakoda
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Abstract

We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 $\mu$m telecom C-band. The luminescence decay is well described in terms of the theoretical interband transition strength without the impact of nonradiative recombination. The intensity autocorrelation function shows clear anti-bunching photon statistics. The results suggest that our quantum dots are useful for constructing a practical source of single photons and quantum entangled photon pairs.

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N. Ha, T. Mano, S. Dubos, T. Kuroda, Y. Sakuma, K. Sakoda. 2020-01-21. Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 $\mu$m. https://doi.org/10.35848/1882-0786/ab6e0f

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