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arXiv · 2002.01114

Negative compressibility in MoS2 capacitance

Ruiyan Gao·Zhehan Ying·Liheng An·Zefei Wu·Xiangbing Cai·Shi Wang·Ziqing Ye·Xuemeng Feng·Meizheng Huang·Ning Wang
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Abstract

Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a newly emerged two-dimensional channel material, molybdenum disulfide (MoS2). The enhancement effects are due to strong electron-electron interaction at the low carrier density regime in MoS2. We achieve about 50% capacitance enhancement in monolayer devices and 10% capacitance enhancement in bilayer devices. However, the enhancement effect is not obvious in multilayer (layer number >3) devices. Using the Hartree-Fock approximation, we illustrate the same trend in our inverse compressibility data.

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Ruiyan Gao, Zhehan Ying, Liheng An, Zefei Wu, Xiangbing Cai, Shi Wang, Ziqing Ye, Xuemeng Feng, Meizheng Huang, Ning Wang. 2020-02-04. Negative compressibility in MoS2 capacitance. https://arxiv.org/abs/2002.01114

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