Transition metal dichalcogenide metamaterials with atomic precision

Abstract

The ability to extract materials just a few atoms thick has led to discovery of graphene, monolayer transition metal dichalcogenides (TMDs), and other important two-dimensional materials. The next step in promoting understanding and utility of the flatland physics beyond the state-of-the-art is to study one-dimensional edges of such two-dimensional materials as well as to control the edge-plane ratio. Edges typically exhibit properties that are unique and distinctly different from those of planes and bulk. Thus, controlling them allows to design principally new materials with synthetic edge-plane-bulk characteristics, that is, TMD metamaterials. However, the enabling technology to study such metamaterials experimentally in a precise and systematic way has not yet been developed. Here we report a facile and controllable anisotropic wet etching method that allows scalable fabrication of TMD metamaterials with atomic precision. We show that TMDs can be etched along certain crystallographic axes, such that the obtained edges are atomically sharp and exclusively zigzag-terminated. This results in hexagonal nanostructures of predefined order and complexity, including few nanometer thin nanoribbons and nanojunctions. The method thus enables future studies of a broad range of TMD metamaterials with tailored functionality through atomically precise control of the structure.