An efficient GFET structure

Abstract

A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the semiclassical Boltzmann equations for charge transport by a suitable discontinuous Galerkin approach. The critical issue in a graphene field effect transistor is the difficulty of fixing the off state which requires an accurate calibration of the gate voltages. In the present paper we propose and simulate a graphene field effect transistor structure which has well-behaved characteristic curves similar to those of conventional (with gap) semiconductor materials. The introduced device has a clear off region and can be the prototype of devices suited for post-silicon nanoscale electron technology. The specific geometry overcomes the problems of triggering the minority charge current and gives a viable way for the design of electron devices based on large area monolayer graphene as substitute of standard semiconductors in the active area. The good field effect transistor behavior of the current versus the gate voltage makes the simulated device very promising and a challenging case for experimentalists.