Non-isothermal Scharfetter-Gummel scheme for electro-thermal transport simulation in degenerate semiconductors

Markus Kantner; Thomas Koprucki

doi:10.1007/978-3-030-43651-3_14

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arXiv · 2002.10133

Non-isothermal Scharfetter-Gummel scheme for electro-thermal transport simulation in degenerate semiconductors

Markus Kantner·Thomas Koprucki

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Abstract

Electro-thermal transport phenomena in semiconductors are described by the non-isothermal drift-diffusion system. The equations take a remarkably simple form when assuming the Kelvin formula for the thermopower. We present a novel, non-isothermal generalization of the Scharfetter-Gummel finite volume discretization for degenerate semiconductors obeying Fermi-Dirac statistics, which preserves numerous structural properties of the continuous model on the discrete level. The approach is demonstrated by 2D simulations of a heterojunction bipolar transistor.

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Markus Kantner, Thomas Koprucki. 2020-02-24. Non-isothermal Scharfetter-Gummel scheme for electro-thermal transport simulation in degenerate semiconductors. https://doi.org/10.1007/978-3-030-43651-3_14

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