Supersaturation model for InN PA-MOCVD

Zaheer Ahmad; Mark Vernon; Garnett B. Cross; Daniel Deocampo; Alexander Kozhanov

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arXiv · 2003.10067

Supersaturation model for InN PA-MOCVD

Zaheer Ahmad·Mark Vernon·Garnett B. Cross·Daniel Deocampo·Alexander Kozhanov

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Abstract

We developed a thermodynamic supersaturation model for plasma-assisted metalorganic chemical vapor deposition of InN. The model is based on the chemical combination of indium with plasma-generated atomic nitrogen ions. Indium supersaturation was analyzed for InN films grown by PA-MOCVD with varying input flow of indium precursor. Raman spectroscopy, X-ray diffraction, and atomic force microscopy provided feedback on structural properties and surface morphology of grown films. Growth parameter variation effect on In supersaturation was analyzed. InN films grown at varying growth parameters resulting in the same In supersaturation value exhibit similar structural properties and surface morphology.

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Zaheer Ahmad, Mark Vernon, Garnett B. Cross, Daniel Deocampo, Alexander Kozhanov. 2020-03-23. Supersaturation model for InN PA-MOCVD. https://arxiv.org/abs/2003.10067

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