Second order divergence in the third order DC response of a cold semiconductor

G. B. Ventura; D. J. Passos; J. M. Viana Parente Lopes; J. M. B. Lopes dos Santos

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arXiv · 2004.01919

Second order divergence in the third order DC response of a cold semiconductor

G. B. Ventura·D. J. Passos·J. M. Viana Parente Lopes·J. M. B. Lopes dos Santos

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Abstract

In this work, we present the analytical expression for the second order divergence in the third order DC response of a cold semiconductor, which can be probed by different electric field setups. Results from this expression were then compared, for the response of the gapped graphene monolayer, with numerical results from a velocity gauge calculation of the third order conductivity. The good agreement between the two validates our analytical expression.

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G. B. Ventura, D. J. Passos, J. M. Viana Parente Lopes, J. M. B. Lopes dos Santos. 2020-04-04. Second order divergence in the third order DC response of a cold semiconductor. https://arxiv.org/abs/2004.01919

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