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arXiv · 2004.12650

Tailoring high-TN interlayer antiferromagnetism in a van der Waals itinerant magnet

Junho Seo·Eun Su An·Taesu Park·Soo-Yoon Hwang·Gi-Yeop Kim·Kyung Song·Eunseok Oh·Minhyuk Choi·Kenji Watanabe·Takashi Taniguchi·Youn Jung Jo·Han Woong Yeom·Si-Young Choi·Ji Hoon Shim·Jun Sung Kim
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Abstract

Antiferromagnetic (AFM) van der Waals (vdW) materials provide a novel platform for synthetic AFM spintronics, in which the spin-related functionalities are derived from manipulating spin configurations between the layers. Metallic vdW antiferromagnets are expected to have several advantages over the widely-studied insulating counterparts in switching and detecting the spin states through electrical currents but have been much less explored due to the lack of suitable materials. Here, utilizing the extreme sensitivity of the vdW interlayer magnetism to material composition, we report the itinerant antiferromagnetism in Co-doped Fe4GeTe2 with TN ~ 210 K, an order of magnitude increased as compared to other known AFM vdW metals. The resulting spin configurations and orientations are sensitively controlled by doping, magnetic field, temperature, and thickness, which are effectively read out by electrical conduction. These findings manifest strong merits of metallic vdW magnets with tunable interlayer exchange interaction and magnetic anisotropy, suitable for AFM spintronic applications.

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Junho Seo, Eun Su An, Taesu Park, Soo-Yoon Hwang, Gi-Yeop Kim, Kyung Song, Eunseok Oh, Minhyuk Choi, Kenji Watanabe, Takashi Taniguchi, Youn Jung Jo, Han Woong Yeom, Si-Young Choi, Ji Hoon Shim, Jun Sung Kim. 2020-04-27. Tailoring high-TN interlayer antiferromagnetism in a van der Waals itinerant magnet. https://arxiv.org/abs/2004.12650

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