Disorder-Induced Quantum Phase Transitions in Three-Dimensional Second-Order Topological Insulators

Abstract

Disorder effects on three-dimensional second-order topological insulators (3DSOTIs) are investigated numerically and analytically. The study is based on a tight-binding Hamiltonian for non-interacting electrons on a cubic lattice with a reflection symmetry that supports a 3DSOTI in the absence of disorder. Interestingly, unlike the disorder effects on a topological trivial system that can only be either a diffusive metal (DM) or an Anderson insulator (AI), disorders can sequentially induce four phases of 3DSOTIs, three-dimensional first-order topologicalinsulators (3DFOTIs), DMs and AIs. At a weak disorder when the on-site random potential of strength $W$ is below a low critical value $W_{c1}$ at which the gap of surface states closes while the bulk sates are still gapped, the system is a disordered 3DSOTI characterized by a constant density of states and a quantized integer conductance of $e^2/h$ through its chiral hinge states. The gap of the bulk states closes at a higher critical disorder $W_{c2}$, and the system is a disordered 3DFOTI in a lower intermediate disorder between $W_{c1}$ and $W_{c2}$ in which electron conduction is through the topological surface states. The system becomes a DM in a higher intermediate disorder between $W_{c2}$ and $W_{c3}$ above which the states at the Fermi level are localized. It undergoes a normal three-dimension metal-to-insulator transition at $W_{c3}$ and becomes the conventional AI for $W>W_{c3}$. The self-consistent Born approximation allows one to see how the density of bulk states and the Dirac mass are modified by the on-site disorders.