SearcharxivSearch

arXiv · 2005.13266

High-resolution tunneling spin transport characteristics of topologically distinct magnetic skyrmionic textures from theoretical calculations

Abstract

High-resolution tunneling electron spin transport properties (longitudinal spin current (LSC) and spin transfer torque (STT) maps) of topologically distinct real-space magnetic skyrmionic textures are reported by employing a 3D-WKB combined scalar charge and vector spin transport theory in the framework of spin-polarized scanning tunneling microscopy (SP-STM). For our theoretical investigation metastable skyrmionic spin structures with various topological charges ($Q=-3,-2,-1,0,1,2$) in the (Pt$_{0.95}$Ir$_{0.05}$)/Fe/Pd(111) ultrathin magnetic film are considered. Using an out-of-plane magnetized SP-STM tip it is found that the maps of the LSC vectors acting on the spins of the magnetic textures and all STT vector components exhibit the same topology as the skyrmionic objects. In contrast, an in-plane magnetized tip generally does not result in spin transport vector maps that are topologically equivalent to the underlying spin structure, except for the LSC vectors acting on the spins of the skyrmionic textures at a specific relation between the spin polarizations of the sample and the tip. The magnitudes of the spin transport vector quantities exhibit close relations to charge current SP-STM images irrespectively of the skyrmionic topologies. Moreover, we find that the STT efficiency (torque/current ratio) acting on the spins of the skyrmions can reach large values up to $\sim$25 meV/$\mu$A ($\sim$0.97 $h/e$) above the rim of the magnetic objects, but it considerably varies between large and small values depending on the lateral position of the SP-STM tip above the topological spin textures. A simple expression for the STT efficiency is introduced to explain its variation. Our calculated spin transport vectors can be used for the investigation of spin-polarized tunneling-current-induced spin dynamics of topologically distinct surface magnetic skyrmionic textures.

Explore related subjects

Keep this discovery

BibTeXRIS

Krisztián Palotás, Levente Rózsa, Eszter Simon, László Szunyogh. 2020-05-27. High-resolution tunneling spin transport characteristics of topologically distinct magnetic skyrmionic textures from theoretical calculations. https://doi.org/10.1016/j.jmmm.2020.167440

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci