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arXiv · 2007.01112

Top-down fabricated reconfigurable FET with two symmetric and high-current on-states

Maik Simon·Boshen Liang·Dustin Fischer·Martin Knaut·Alexander Tahn·Thomas Mikolajick·Walter M. Weber
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Abstract

We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer characteristics, high on/off current ratios in both configurations and superior current densities in comparison to other top-down fabricated RFETs. Two NiSi2/Si Schottky junctions are formed inside the wire and gated individually. The narrow omega-gated channel is fabricated by a repeated SiO2 etch and growth sequence and a conformal TiN deposition. The gate and Schottky contact metal work functions and the oxide-induced compressive stress to the Schottky junction are adjusted to result in only factor 1.6 higher p- than n-current for in absolute terms identical gate voltages and identical drain voltages.

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Maik Simon, Boshen Liang, Dustin Fischer, Martin Knaut, Alexander Tahn, Thomas Mikolajick, Walter M. Weber. 2020-07-02. Top-down fabricated reconfigurable FET with two symmetric and high-current on-states. https://doi.org/10.1109/led.2020.2997319

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