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arXiv · 2007.06462

Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS transistor by RMS noise analysis

Stefano Bigoni·Marco L. V. Tagliaferri·Dario Tamascelli·Sebastiano Strangio·Roberto Bez·Paolo Organtini·Giorgio Ferrari·Enrico Prati
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Abstract

We explore phonon-mediated quantum transport through electronic noise characterization of a commercial CMOS transistor. The device behaves as a single electron transistor thanks to a single impurity atom in the channel. A low noise cryogenic CMOS transimpedance amplifier is exploited to perform low-frequency noise characterization down to the single electron, single donor and single phonon regime simultaneously, not otherwise visible through standard stability diagrams. Single electron tunneling as well as phonon-mediated features emerges in rms-noise measurements. Phonons are emitted at high frequency by generation-recombination phenomena by the impurity atom. The phonon decay is correlated to a Lorentzian $1/f^2$ noise at low frequency.

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Stefano Bigoni, Marco L. V. Tagliaferri, Dario Tamascelli, Sebastiano Strangio, Roberto Bez, Paolo Organtini, Giorgio Ferrari, Enrico Prati. 2020-07-13. Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS transistor by RMS noise analysis. https://doi.org/10.35848/1882-0786%2Fabc7cf

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