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arXiv · 2007.14940

Monte Carlo analysis of phosphorene nanotransistors

Gautam Gaddemane·Maarten L. Van de Put·William G. Vandenberghe·Edward Chen·Massimo V. Fischetti
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Abstract

Experimental studies on two-dimensional (2D) materials are still in the early stages, and most of the theoretical studies performed to screen these materials are limited to the room-temperature carrier-mobility in the free standing 2D layers. With the dimensions of devices moving towards nanometer-scale lengths, the room-temperature carrier-mobility -- an equilibrium concept -- may not be the main quantity that controls the performance of devices based on these 2D materials, since electronic transport occurs under strong off--equilibrium conditions. Here we account for these non-equilibrium conditions and, for the case of monolayer phosphorene (monolayer black phosphorus), show the results of device simulations for a short channel n-MOSFET, using the Monte Carlo method coupled with the Poisson equation, including full bands and full electron-phonon matrix elements obtained from density functional theory. Our simulations reveal significant intrinsic limitations to the performance of phosphorene as a channel material in nanotransistors.

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Gautam Gaddemane, Maarten L. Van de Put, William G. Vandenberghe, Edward Chen, Massimo V. Fischetti. 2020-07-29. Monte Carlo analysis of phosphorene nanotransistors. https://arxiv.org/abs/2007.14940

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