An electro-thermal computational study of conducting channels in dielectric thin films using self-consistent phase-field methodology: A view toward the physical origins of resistive switching

Foroozan S. Koushan; Nobuhiko P. Kobayashi

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arXiv · 2007.15123

An electro-thermal computational study of conducting channels in dielectric thin films using self-consistent phase-field methodology: A view toward the physical origins of resistive switching

Foroozan S. Koushan·Nobuhiko P. Kobayashi

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Abstract

A large number of experimental studies suggest two-terminal resistive switching devices made of a dielectric thin film sandwiched by a pair of electrodes exhibit reversible multi-state switching behaviors; however coherent understanding of physical and chemical origins of their electrical properties needs to be further pursued to improve and customize the performance. In this paper, phase-field methodology is used to study the formation and annihilation of conductive channels resulting in reversible resistive switching behaviors that can generally occur in any dielectric thin films. Our focus is on the dynamical evolution of domains made of electrical charges under the influence of spatially varying electric field and temperature resulting in distinctive changes in electrical conductance.

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Foroozan S. Koushan, Nobuhiko P. Kobayashi. 2020-07-29. An electro-thermal computational study of conducting channels in dielectric thin films using self-consistent phase-field methodology: A view toward the physical origins of resistive switching. https://arxiv.org/abs/2007.15123

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