SearcharxivSearch

arXiv · 2008.01981

Inversion in a four-terminal superconducting device on the quartet line: I. Two-dimensional metal and the quartet beam splitter

Abstract

In connection with the recent Harvard group experiment on graphene-based four-terminal Josephson junctions containing a grounded loop, we consider biasing at opposite voltages on the quartet line and establish lowest-order perturbation theory in the tunnel amplitudes between a two-dimensional (2D) metal and four superconducting leads in the dirty limit. We present in addition general nonperturbative and nonadiabatic results. The critical current on the quartet line $I_c(Φ/Φ_0)$ depends on the reduced flux $Φ/Φ_0$ via interference between the three-terminal quartets (3TQ) and the nonstandard four-terminal split quartets (4TSQ). The 4TSQ result from synchronizing two Josephson junctions by exchange of two quasiparticles "surfing" on the 2D quantum wake, and this mechanism is already operational at equilibrium. Perturbation theory in the tunnel amplitudes shows that the 3TQ are $π$-shifted but the 4TSQ are $0$-shifted if the contacts have linear dimension which is large compared to the elastic mean free path. We establish the gate voltage dependence of the quartet critical current oscillations $I_c(Φ/Φ_0)$. It is argued that "Observation of $I_c(0)\ne I_c(1/2)$" implies "Evidence for the four-terminal 4TSQ" for finite bias voltage on the quartet line and arbitrary interface transparencies. This statement relies on physically-motivated approximations leading to the Ambegaokar-Baratoff-type formula for the quartet critical current-flux relation. It is concluded that the recent experiment mentioned above finds evidence for the four-terminal 4TSQ.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Régis Mélin. 2020-12-13. Inversion in a four-terminal superconducting device on the quartet line: I. Two-dimensional metal and the quartet beam splitter. https://doi.org/10.1103/physrevb.102.245435

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Emergence of spin-orbit coupling among spin, atomic orbital, and Bloch dynamics in Janus double-transition-metal MXenes

We found a spin-orbit coupling to cause a simultaneous correlation among three degrees of freedom, the electronic spin, orbital, and Bloch dynamics in an investigation into the electronic structure of Janus double-transition-metal MXenes, Mo$_2$HfC$_2$OS and W$_2$HfC$_2$OS. In this paper, it is also revealed that the spin-orbit coupling causes a staggered spin configuration with a trigonal pattern around the $\Gamma$ point near the insulating gap. We developed a reduced Hamiltonian describing the electronic states and show that the spin-orbit coupling cannot be equated with conventional forms for a single electron in solids, LS, Rashba, and Dresselhaus couplings, even in the approximation under the low-energy and small wave number condition. Because of the intrinsic shape of the conduction band, a trigonally alternating spin-momentum locking emerges with the spin axis perpendicular to the layer plane. The theoretical analysis shows that these Janus materials can provide a platform for exploring the spin-related phenomena due to the trigonal spin-momentum locking other than Rashba and Dresselhaus types.

cond-mat.mes-hall

A substrate booster for P-type 2D ferromagnetic semiconductor

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

cond-mat.mes-hall

In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

cond-mat.mes-hall