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arXiv · 2008.06666

Microwave AC voltage induced phase change in Sb$_2$Te$_3$ nanowires

Pok-Lam Tse·Laura Mugica-Sanchez·Fugu Tian·Oliver Ruger·Andreas Undisz·George Moethrath·Susumu Takahashi·Carsten Ronning·Jia Grace Lu
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Abstract

Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity and promising scalability. In this work, we present the demonstration of microwave AC voltage induced phase change phenomenon at 3 GHz in single Sb$_2$Te$_3$ nanowires. The resistance change by a total of 6 - 7 orders of magnitude is evidenced by a transition from the crystalline metallic to the amorphous semiconducting phase, which is cross-examined by temperature dependent transport measurement and high-resolution electron microscopy analysis. This discovery could potentially tailor multi-state information bit encoding and discrimination along a single nanowire, rendering technology advancement for neuro-inspired computing devices.

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Pok-Lam Tse, Laura Mugica-Sanchez, Fugu Tian, Oliver Ruger, Andreas Undisz, George Moethrath, Susumu Takahashi, Carsten Ronning, Jia Grace Lu. 2020-08-15. Microwave AC voltage induced phase change in Sb$_2$Te$_3$ nanowires. https://doi.org/10.1021/acs.nanolett.0c03421

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