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arXiv · 2009.01207

Metalorganic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates

M. A. Mastro·R. T. Holm·N. D. Bassim·D. K. Gaskill·J. C. Culbertson·M. Fatemi·C. R. Eddy Jr.·R. L. Henry·M. E. Twigg
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Abstract

High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first time for an AlN/GaN DBR with a stop-band centered in the blue-green range of the visible spectrum. Crack-free GaN cap layers were grown on the DBR structures to demonstrate the opportunity to build III-nitride optoelectronic devices in this material. The DBR structure was under significant strain due to growth on a mismatched substrate although the GaN cap layer was shown to be strain free.

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M. A. Mastro, R. T. Holm, N. D. Bassim, D. K. Gaskill, J. C. Culbertson, M. Fatemi, C. R. Eddy Jr., R. L. Henry, M. E. Twigg. 2020-09-02. Metalorganic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates. https://doi.org/10.1116/1.2172937

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