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arXiv · 2009.02887

Dependency of high-speed write properties on external magnetic field in spin-orbit torque in-plane magnetoresistance devices

Yohei Shiokawa·Eiji Komura·Yugo Ishitani·Atsushi Tsumita·Keita Suda·Kosuke Hamanaka·Tomohiro Taniguchi·Tomoyuki Sasaki
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Abstract

Spin-orbit torque (SOT) magnetoresistance (MR) devices have attracted attention for use in next-generation MR devices. The SOT devices are known to exhibit different write properties based on the relative angle between the magnetization direction of the free layer and the write-current direction. However, few studies that compare the write properties of each type have been reported. In this study, we measured the external perpendicular-magnetic field dependence of the threshold write current density and the write current switching probability using two types of in-plane magnetization SOT-MR devices.

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Yohei Shiokawa, Eiji Komura, Yugo Ishitani, Atsushi Tsumita, Keita Suda, Kosuke Hamanaka, Tomohiro Taniguchi, Tomoyuki Sasaki. 2020-09-07. Dependency of high-speed write properties on external magnetic field in spin-orbit torque in-plane magnetoresistance devices. https://doi.org/10.35848/1882-0786%2Fabd598

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