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arXiv · 2009.06046

Heavily $n$-doped Ge: low-temperature magnetoresistance properties

A. Ferreira da Silva·M. A. Toloza Sandoval·A. Levine·E. Levinson·H. Boudinov·B. E. Sernelius
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Abstract

We report here an experimental and theoretical study on the magnetoresistance properties of heavily phosphorous doped germanium on the metallic side of the metal-nonmetal transition. An anomalous regime, formed by negative values of the magnetoresistance, was observed by performing low-temperature measurements and explained within the generalized Drude model, due to the many-body effects. It reveals a key mechanism behind the magnetoresistance properties at low temperatures and, therefore, constitutes a path to its manipulation in such materials of great interest in fundamental physics and technological applications

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A. Ferreira da Silva, M. A. Toloza Sandoval, A. Levine, E. Levinson, H. Boudinov, B. E. Sernelius. 2020-09-13. Heavily $n$-doped Ge: low-temperature magnetoresistance properties. https://doi.org/10.1063/1.5125882

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