Gate-tunable cross-plane heat dissipation in single-layer transition metal dichalcogenides

Abstract

Efficient heat dissipation to the substrate is crucial for optimal device performance in nanoelectronics. We develop a theory of electronic thermal boundary conductance (TBC) mediated by remote phonon scattering for the single-layer transition metal dichalcogenide (TMD) semiconductors MoS$_{2}$ and WS$_{2}$, and model their electronic TBC with different dielectric substrates (SiO$_{2}$, HfO$_{2}$ and Al$_{2}$O$_{3}$). Our results indicate that the electronic TBC is strongly dependent on the electron density, suggesting that it can be modulated by the gate electrode in field-effect transistors, and this effect is most pronounced with Al$_{2}$O$_{3}$. Our work paves the way for the design of novel thermal devices with gate-tunable cross-plane heat-dissipative properties.