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arXiv · 2009.12439

Spin-selective resonant tunneling induced by Rashba spin-orbit interaction in semiconductor nanowire

J. Pawłowski·G. Skowron·P. Szumniak·S. Bednarek
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Abstract

We consider a single electron confined within a quantum wire in a system of two electrostatically-induced QDs defined by nearby gates. The time-varying electric field, of single GHz frequency, perpendicular to the quantum wire, is used to induce the Rashba coupling and enable spin-dependent resonant tunneling of the electron between two adjacent potential wells with fidelity over 99.5%. This effect can be used for the high fidelity all-electrical electron-spin initialization or readout in the spin-based quantum computer. In contrast to other spin initialization methods, our technique can be performed adiabatically without increase in the energy of the electron. Our simulations are supported by a realistic self-consistent time-dependent Poisson-Schroedinger calculations.

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J. Pawłowski, G. Skowron, P. Szumniak, S. Bednarek. 2020-09-25. Spin-selective resonant tunneling induced by Rashba spin-orbit interaction in semiconductor nanowire. https://doi.org/10.1103/physrevapplied.15.054066

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