SearcharxivSearch

arXiv · 2010.04544

Thermal disorder driven magnetic phases in van der Waals magnet CrI3

Abstract

Magnetic phase transitions often occur spontaneously at specific critical temperatures. The presence of more than one critical temperature (Tc) has been observed in several compounds where the coexistence of competing magnetic orders highlights the importance of phase separation driven by different factors such as pressure, temperature and chemical composition. However, it is unknown whether recently discovered two-dimensional (2D) van der Walls (vdW) magnetic materials show such intriguing phenomena that can result in rich phase diagrams with novel magnetic features to be explored. Here we show the existence of three magnetic phase transitions at different Tc's in 2D vdW magnet CrI3 revealed by a complementary suite of muon spin relaxation-rotation, superconducting quantum interference device magnetometry, and large-scale atomistic simulations including higher-order exchange interactions. We find that the traditionally identified Curie temperature of bulk CrI3 at 61 K does not correspond to the long-range order in the full volume (VM) of the crystal but rather a partial transition with less than 25% of VM being magnetically spin-ordered. This transition is composed of highly disordered domains with the easy-axis component of the magnetization Sz not being fully spin-polarized but disordered by in-plane components (Sx, Sy) over the entire layer. As the system cools down, two additional phase transitions at 50 K and 25 K drive the system to 80% and nearly 100% of the magnetically ordered volume, respectively, where the ferromagnetic ground state has a marked Sz character yet also displaying finite contributions of Sx and Sy to the total magnetization. Our results indicate that volume-wise competing electronic phases play an important role in the magnetic properties of CrI3 which set a much lower threshold temperature for exploitation in magnetic device-platforms than initially considered.

Explore related subjects

Keep this discovery

BibTeXRIS

Jaume Meseguer-Sanchez, Dina Abdul Wahab, Hubertus Luetkens, Grigol Taniashvili, Efren Navarro-Moratalla, Zurab Guguchia, Elton J. G. Santos. 2020-10-09. Thermal disorder driven magnetic phases in van der Waals magnet CrI3. https://arxiv.org/abs/2010.04544

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Emergence of spin-orbit coupling among spin, atomic orbital, and Bloch dynamics in Janus double-transition-metal MXenes

We found a spin-orbit coupling to cause a simultaneous correlation among three degrees of freedom, the electronic spin, orbital, and Bloch dynamics in an investigation into the electronic structure of Janus double-transition-metal MXenes, Mo$_2$HfC$_2$OS and W$_2$HfC$_2$OS. In this paper, it is also revealed that the spin-orbit coupling causes a staggered spin configuration with a trigonal pattern around the $\Gamma$ point near the insulating gap. We developed a reduced Hamiltonian describing the electronic states and show that the spin-orbit coupling cannot be equated with conventional forms for a single electron in solids, LS, Rashba, and Dresselhaus couplings, even in the approximation under the low-energy and small wave number condition. Because of the intrinsic shape of the conduction band, a trigonally alternating spin-momentum locking emerges with the spin axis perpendicular to the layer plane. The theoretical analysis shows that these Janus materials can provide a platform for exploring the spin-related phenomena due to the trigonal spin-momentum locking other than Rashba and Dresselhaus types.

cond-mat.mes-hall

A substrate booster for P-type 2D ferromagnetic semiconductor

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

cond-mat.mes-hall

In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

cond-mat.mes-hall