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arXiv · 2010.11068

Broad diversity of near-infrared single-photon emitters in silicon

A. Durand·Y. Baron·W. Redjem·T. Herzig·A. Benali·S. Pezzagna·J. Meijer·A. Yu. Kuznetsov·J. -M. Gérard·I. Robert-Philip·M. Abbarchi·V. Jacques·G. Cassabois·A. Dréau
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Abstract

We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the [1.1,1.55]-$\mu$m range, spanning the O- and C-telecom bands. We analyse their photoluminescence spectrum, dipolar emission and optical relaxation dynamics at 10K. For a specific family, we show a constant emission intensity at saturation from 10K to temperatures well above the 77K-liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these novel artificial atoms are promising candidates for Si-based quantum technologies.

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A. Durand, Y. Baron, W. Redjem, T. Herzig, A. Benali, S. Pezzagna, J. Meijer, A. Yu. Kuznetsov, J. -M. Gérard, I. Robert-Philip, M. Abbarchi, V. Jacques, G. Cassabois, A. Dréau. 2020-10-21. Broad diversity of near-infrared single-photon emitters in silicon. https://doi.org/10.1103/physrevlett.126.083602

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